Si5858DU
Vishay Siliconix
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET) b, f
t ≤ 5s
R thJA
45
55
Maximum Junction-to-Case (Drain) (MOSFET)
Maximum Junction-to-Ambient (Schottky)
Maximum Junction-to-Case (Drain) (Schottky)
t ≤ 5s
R thJC
R thJA
R thJC
12
49
13
15
61
16
°C/W
Notes:
a. Package limited.
b. Surface Mounted on FR4 board.
c. t = 5 s.
d. See Solder Profile ( www.vishay.com/ppg?73257 ). The PowerPAK ChipFET is a leadless package. The end of the lead terminal is exposed
copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and
is not required to ensure adequate bottom side solder interconnection.
e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.
f. Maximum under Steady State conditions for MOSFETS is 105 °C/W.
g. Maximum under Steady State conditions for Schottky is 110 °C/W.
SPECIFICATIONS T J = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
V DS Temperature Coefficient
V GS(th) Temperature Coefficient
V DS
Δ V DS/TJ
Δ V GS(th)/TJ
V GS = 0 V, I D = 250 μA
I D = 250 μA
20
17.4
- 2.6
V
mV/°C
Gate-Source Threshold Voltage
V GS(th)
V DS = V GS , I D = 250 μA
0.4
1.0
V
Gate-Source Leakage
Zero Gate Voltage Drain Current
On-State Drain Current a
I GSS
I DSS
I D(on)
V DS = 0 V, V GS = ± 8 V
V DS = 20 V, V GS = 0 V
V DS = 20 V, V GS = 0 V, T J = 55 °C
V DS ≤ 5 V, V GS = 4.5 V
V GS = 4.5 V, I D = 4.4 A
- 20
0.032
± 100
-1
- 10
0.039
nA
μA
A
Drain-Source On-State Resistance a
R DS(on)
V GS = 2.5 V, I D = 4.1 A
0.037
0.045
Ω
V GS = 1.8 V, I D = 1.8 A
0.0455
0.055
Forward Transconductance a
g fs
V DS = 10 V, I D = 4.4 A
22
S
Dynamic b
Input Capacitance
C iss
520
Output Capacitance
Reverse Transfer Capacitance
C oss
C rss
V DS = 10 V, V GS = 0 V, f = 1 MHz
100
60
pF
Total Gate Charge
Gate-Source Charge
Q g
Q gs
V DS = 10 V, V GS = 8 V, I D = 4.4 A
V DS = 10 V, V GS = 4.5 V, I D = 4.4 A
10.5
6
0.91
16
9
nC
Gate-Drain Charge
Q gd
0.7
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
R g
t d(on)
t r
t d(off)
f = 1 MHz
V DD = 10 V, R L = 2.8 Ω
I D ? 3.6 A, V GEN = 4.5 V, R g = 1 Ω
1.9
20
65
40
30
100
60
Ω
Fall Time
Turn-On Delay Time
t f
t d(on)
10
5
15
10
ns
Rise Time
Turn-Off Delay Time
Fall Time
t r
t d(off)
t f
V DD = 10 V, R L = 2.8 Ω
I D ? 3.6 A, V GEN = 8 V, R g = 1 Ω
12
26
8
20
40
15
www.vishay.com
2
Document Number: 73460
S09-2111-Rev. C, 12-Oct-09
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